technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com pnp silicon dual transistor qualified per mil-prf-19500 /336 t4-lds-0118 rev. 2 (110152) page 1 of 5 devices levels 2n3810 2n3811 jan 2n3810l 2n3811l jantx 2n3810u 2n3811u jantv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 60 vdc collector-base voltage v cbo 60 vdc emitter-base voltage v ebo 5.0 vdc collector current i c 50 madc one section 1 both sections 2 total power dissipation @ t a = +25 c p t 200 350 mw operating & storage junction temperature range t j , t stg -65 to +200 c notes: 1. derate linearly 1.143mw/c for t a > +25c (one section) 2. derate linearly 2.000mw/c for t a > +25c (both sections) electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter br eakdown voltage v (br)ceo vdc i c = 100 adc adc v cb = 50vdc v cb = 60vdc 10 10 emitter-base cutoff current i ebo v eb = 4.0vdc v eb = 5.0vdc 10 10 adc to-78 u - package
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0118 rev. 2 (110152) page 2 of 5 electrical characte ristics (con?t) parameters / test conditions symbol min. max. unit on charactertics forward-current transfer ratio i c = 10 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc i c = 10madc, v ce = 5.0vdc 2n3810, 2n3810l , 2n3810u h fe 100 150 150 125 450 450 i c = 1.0 adc, v ce = 5.0vdc i c = 100 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc i c = 10madc, v ce = 5.0vdc 2n3811, 2n3811l, 2n3811u h fe 75 225 300 300 250 900 900 collector-emitter saturation voltage v ce(sat) vdc i c = 100 adc 0.2 0.25 base-emitter saturation voltage v be(sat) vdc i c = 100 adc 0.7 0.8 base-emitter non-saturation voltage v be vdc v ce = 5.0adc, i c = 100 dynamic characteristics forward current transfer ratio, magnitude |h fe | i c = 500 i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n3810, 2n3810l , 2n3810u 2n3811, 2n3811l , 2n3811u 150 300 600 900 small-signal short circuit input impedance h je k i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n3810, 2n3810l , 2n3810u 2n3811, 2n3811l , 2n3811u 3.0 3.0 30 40 small-signal short circuit output admittance h oe mhos i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n3810, 2n3810l , 2n3810u 2n3811, 2n3811l , 2n3811u 5.0 60
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0118 rev. 2 (110152) page 3 of 5 dynamic characteristics (cont.) parameters / test conditions symbol min. max. unit output capacitance v cb = 5.0vdc, i e = 0, 100khz f 1.0mhz c obo 5.0 pf input capacitance v eb = 5.0vdc, i c = 0, 100khz f 1.0mhz c ibo 8.0 pf noise figure db i c = 100 adc, v ce = 10vdc, f = 100hz, r g = 3.0k 2n3810, l, u f 1 7.0 i c = 100 adc, v ce = 10vdc, f = 1.0khz, r g = 3.0k 2n3810, l, u f 2 3.0 i c = 100 adc, v ce = 10vdc, f = 10khz, r g = 3.0k 2n3810, l, u f 3 2.5 i c = 100 adc, v ce = 10vdc, f = 10hz to 15.7khz, r g = 3.0k 2n3810, l, u f 4 3.5 i c = 100 adc, v ce = 10vdc, f = 100hz, r g = 3.0k 2n3811, l, u f 1 4.0 db i c = 100 adc, v ce = 10vdc, f = 1.0khz, r g = 3.0k 2n3811, l, u f 2 1.5 i c = 100 adc, v ce = 10vdc, f = 10khz, r g = 3.0k 2n3811, l, u f 3 2.0 i c = 100 adc, v ce = 10vdc, f = 10hz to 15.7khz, r g = 3.0k 2n3811, l, u f 4 2.5
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0118 rev. 2 (110152) page 4 of 5 package dimensions notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 refer to rules for dimensioning semiconductor product outlines included in publication no. 95. 4 lead number 4 and 8 omitted on this variation. 5 tw must be held to a minimum length of .021 inch (0.53 mm). 6 ll measured from maximum hd. 7 details of outline in this zone optional. 8 cd shall not vary more than .010 inch (0.25mm) in zone p. this zone is controlled for automatic handling. 9 leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (tp) at a maximum material condition (mmc) relative to the tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure described on gauge drawing gs-1. 10 ld applies to ll minimum. 11 r (radius) applies to both inside corners of tab. 12 for transistor types 2n3810 and 2n3811, ll is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. (to- 78). 13 for transistor types 2n3810l and 2n3811l, ll is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. 14 in accordance with amse y14.5m , diameters are equivalent to x symbology. 15 leads 3 and 5 = emitter, leads 2 and 6 = base, leads 1 and 7 = collector. figure 1 . physical dimensions (similar to to-78 ) dimensions ltr inches millimeters notes min max min max cd .305 .335 7.75 8.51 ch .150 .185 3.81 4.70 hd .335 .370 8.51 9.40 ht .009 .041 0.23 1.04 lc .200 bsc 5.08 bsc ld .016 .021 0.41 0.53 10 ll see notes 10, 11, and 13 45 tp 45 tp 9 tl .029 .045 0.74 1.14 5, 6 tw .028 .034 0.71 0.86 4, 5
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0118 rev. 2 (110152) page 5 of 5 symbol dimensions inches millimeters min max min max bl .240 .250 6.10 6.35 bl2 .250 6.35 bw .165 .175 4.19 4.45 bw2 .175 4.45 ch .044 .080 1.12 2.03 lh .026 .039 0.66 0.99 ll1 .060 .070 1.52 1.78 ll2 .082 .098 2.08 2.49 ls1 .095 .105 2.41 2.67 ls2 .045 .055 1.14 1.40 lw .022 .028 0.56 0.71 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 in accordance with amse y14.5m , diameters are equivalent to x symbology. figure 2 . physical dimensions (2n3810u and 2n3811u) . pin no. transistor 1 collector no. 1 2 base no. 1 3 base no. 2 4 collector no. 2 5 emitter no. 2 6 emitter no. 1
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